In-plane ferroelectricity in highly textured BaTiO3 thin filmsThursday (27.09.2018) 18:30 - 18:45 S1/03 - 223 Part of:
Ferroelectric BaTiO3 (BT) is a widely used dielectric material and BT thin films are of interest for optical modulators, memristors as well as other devices. One of the main disadvantages of BT is the low Curie temperature limiting the temperature range for application of BT. Enhanced Curie temperature and ferroelectric properties of BT have been obtained by strain engineering of epitaxial BT thin films on single crystal substrates. Here, we investigate the in-plane ferroelectric properties of BT thin films deposited on SrTiO3 (STO) substrates with different crystallographic orientation. Highly textured and ~300 nm thin films of BT were prepared by chemical solution deposition using an aqueous precursor solution. The BT films were deposited by spin coating the aqueous solution on monocrystalline STO substrates with (001), (011) or (111) orientation. The amorphous deposited thin films were first crystallized by rapid thermal processing before final annealing at temperatures up to 1000 °C. The crystallization kinetics and texture of the BT thin films were investigated by in situ grazing incident synchrotron X-ray diffraction. The in-plane ferroelectric properties of the strongly textured films were characterized by using Pt interdigitated electrodes (IDE). The IDEs were deposited at several angles relative to the substrate orientation so that the properties were characterized along different in-plane crystallographic directions. The in-plane ferroelectric properties are discussed with respect to different microstructural features such as the ferroelectric domain pattern in the different films, the STO/BT interface, out of plane grain boundaries in the films and the finally the surface of the BT thin films.