Oblique angle deposition (OAD) is typically recognized as an useful procedure to control the nanostructure of thin films and the fabrication of nanosculptured layers an multilayers widely used for a large set of applications .1 The present work aims at opening new possibilities for the OAD of thin films and structures in relation with the control of the stoichiometry of oxide (e.g. SiOx, VOx, WOx, ..) or nitride (ALNx, TiNx, ..) thin films and multilayers. To illustrate the method, we present a series of principles and MC simulations enabling the fabrication by magnetron sputtering at oblique angles of SiOx thin films where both the stoichiometry (i.e., x value) and nanocolumnar growth can be controlled “a la carte”. This is demonstrated with the fabrication by magnetron sputtering at oblique angles of series of SiOx thin films and SiO2/SiOx multilayers with equivalent O/Si ratios (x: 0.4, 0.8, 1.2, 1.6) and variable nanostructures from compact/homogeneous to porous/ nanocolumnar.
In addition to the tailored fabrication of SiOx thin films, this specific OAD method is applied for the 2D patterning of the composition of deposited thin films. This purpose is achieved by the magnetron sputtering deposition at oblique angles of silicon oxides onto patterned substrates. Examples are provided showing that the surface stoichiometry can be controlled laterally onto linear patterned substrates with pattern sizes in the order of some hundreds nanometers.
1.-A. Barranco, A. Borrás, A. R. González-Elipe, A. Palmero. Progr. Mater. Sci. 76 (2016) 59-153
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